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Vapour pressures of arsenic over InAs(c) and GaAs(c). The enthalpies of formation of InAs(c) and GaAs(c)

Authors
Journal
The Journal of Chemical Thermodynamics
0021-9614
Publisher
Elsevier
Publication Date
Volume
6
Issue
2
Identifiers
DOI: 10.1016/0021-9614(74)90255-9

Abstract

Abstract The equilibrium vapour pressures of arsenic over InAs(c) and GaAs(c) have been studied using the Knudsen-cell mass-spectrometric technique. Appropriate corrections were made for the solubility of arsenic in the liquid metals Ga and In which were produced in the decomposition. The following enthalpies of decomposition were derived: 2 GaAs(c)=2Ga(c)+As 2(g); δH°(298.15 K)=(89.7±1.2) kcal th mol −1; 2 InAs(c)=2In(c)+As 2(g); δH°(298.15 K)=(77.7±1.2) kcal th mol −1; The errors assigned are estimates of total error. Enthalpies of formation of GaAs(c) and InAs(c) were also derived. From measurements of the partial pressures of both As 2 and As 4 over InAs(c), the enthalpy of dissociation of As 4 was also determined. As 1(g)=2As 2(g); δH°(298.15 K)=(54.4±1.5) kcal th mol −1 . This is in excellent agreement with the result obtained previously when MoAs 2(c) and Mo 2As 3(c) were used as sources.

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