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Proof of kinetic influence in Ge nanowire formation on Si(1 1 3)

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-0248(01)02243-6
Keywords
  • A1. Stresses
  • A1. Surface Structure
  • A3. Molecular Beam Epitaxy
  • B2. Semiconducting Silicon

Abstract

Abstract Based on scanning tunneling microscopy observations, we have investigated the formation and self-stabilization of Ge nanowires on Si(1 1 3) during Ge deposition. Under zero Ge flux, we observed a shape transition from nanowires to dot-like islands by annealing at 430°C, which is a favorable temperature for nanowire formation during deposition. The nanowires are, therefore, metastable and are formed under a kinetically limited growth condition. We find that the strain of the nanowire is relaxed anisotropically. During growth the nanowire shape is effectively self-stabilizing, which leads to elongated growth of the islands.

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