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Multi-band simulation of resonant tunneling diodes with scattering effects

Authors
Journal
Physica B Condensed Matter
0921-4526
Publisher
Elsevier
Publication Date
Volume
272
Identifiers
DOI: 10.1016/s0921-4526(99)00263-x
Keywords
  • Green'S Functions
  • Tight-Binding Method
  • Complex Band Structure
  • Mode Matching
  • Polar Optical Phonon Scattering
  • Resonant Tunneling Diode

Abstract

Abstract The effects of polar optical phonon (POP) scattering and interface-roughness (IR) scattering on the current of GaAs/AlAs resonant tunneling diodes (RTDs) are simulated based on a multi-band, non-equilibrium Green's function method. Space charge effect is also taken into account by solving the Poisson's equation self-consistently. As a result, we have found that the multiband nature and space charge effects significantly change the results of conventional RTD simulations and the POP scattering has a more significant effect on the valley current than IR scattering.

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