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Annealing effect on the characteristics of MTIS solar cells

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
38
Issue
11
Identifiers
DOI: 10.1016/0038-1101(95)00006-f

Abstract

Abstract Modification of interface parameters of solar cells with a metal-thin insulator-semiconductor structure depending on annealing has been investigated. It has been shown that as a result of annealing the dark current is drastically increased, the ideality factor and photocurrent is slightly increased. Furthermore annealing increases the interface state density, especially in the middle of the band-gap. The mechanisms underlying modification of the solar cell parameters after annealing are discussed.

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