Affordable Access

Publisher Website

Influence of oxygen plasma treatment on boron carbon nitride film composition

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Volume
255
Issue
6
Identifiers
DOI: 10.1016/j.apsusc.2008.10.045
Keywords
  • Ashing
  • Interconnection
  • Low-K
  • Bcn
  • Low Dielectric Constant
  • O2Plasma
  • Xps

Abstract

Abstract Variations in the composition and bonds of boron carbon nitride (BCN) film caused due to an oxygen (O2) plasma ashing process are investigated for a low dielectric constant (low-k) insulating film for next generation LSI devices. The O2 plasma treatment is preformed for BCN samples with various C compositions. The etching rate of BCN films with an O2 plasma decreases with increasing C composition. The reaction of O atoms is suppressed in the BCN film with a high C composition. B–N and B–C bonds with lower bond energies are easily broken by the O2 plasma and replaced by the generation of B–O, N–O, and C–O bonds. The B-atom concentration for all samples is decreased significantly by the O2 plasma treatment. Ion bombardment may play a more dominant role than the O-atom reaction in the etching of the BCN film. The existence of C–N bonds with a high bonding energy may suppress etching and incorporation of O atoms.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Influence of hydrogen and oxygen plasma treatment...

on Applied Surface Science Jan 01, 2005

Properties of boron carbon nitride (BCN) film afte...

on Diamond and Related Materials Jan 01, 2009

Surface properties of boron carbon nitride films t...

on Diamond and Related Materials Jan 01, 2006

Influence of the sputtering gas composition on the...

on Diamond and Related Materials Jan 01, 1998
More articles like this..