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Micro-Raman study of heteroepitaxial InGaAs layers

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
121
Issue
3
Identifiers
DOI: 10.1016/0022-0248(92)90153-a

Abstract

Abstract Heteroepitaxial InGaAs layers on (100) GaAs and InAs substrates are characterized by micro-Raman spectroscopy. The samples are angle-lapped to observe depth profiles of phonon frequency. The GaAs-like LO frequency is shifted upward near the interface in InGaAs / GaAs and downward in InGaAs / InAs. The shift is believed to be due to residual misfit strain, and it is larger in InGaAs / InAs than in a GaAs / InAs structure where the mismatch degree is larger. The results of Raman measurements are compared with results of X-ray diffraction and transmission electron microscope.

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