Abstract The impact of the miscut of a (0001) c-plane substrate on the structural and optical properties of InGaN/GaN quantum wells grown by metal-organic vapour phase epitaxy using a two-temperature method has been investigated. The two-temperature growth method involves exposure of the uncapped InGaN quantum well to a temperature ramp in an ammonia atmosphere before growth of the GaN barrier at a higher temperature. The resulting quantum well, consists of interlinking InGaN strips containing gaps which may impede carrier diffusion to dislocations. By increasing the substrate misorientation from 0° to 0.5° we show that the density of InGaN strips increases while the strip width reduces. Our data show that the PL efficiency increases with miscut and that the peak efficiency occurs at a lower excitation power density.