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The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
386
Identifiers
DOI: 10.1016/j.jcrysgro.2013.10.004
Keywords
  • A1. Substrate
  • A1. Surface Structure
  • A3. Metalorganic Vapour Phase Epitaxy
  • A3. Quantum Wells
  • B1. Nitrides
  • B2. Semiconducting Iii–V Materials
Disciplines
  • Physics

Abstract

Abstract The impact of the miscut of a (0001) c-plane substrate on the structural and optical properties of InGaN/GaN quantum wells grown by metal-organic vapour phase epitaxy using a two-temperature method has been investigated. The two-temperature growth method involves exposure of the uncapped InGaN quantum well to a temperature ramp in an ammonia atmosphere before growth of the GaN barrier at a higher temperature. The resulting quantum well, consists of interlinking InGaN strips containing gaps which may impede carrier diffusion to dislocations. By increasing the substrate misorientation from 0° to 0.5° we show that the density of InGaN strips increases while the strip width reduces. Our data show that the PL efficiency increases with miscut and that the peak efficiency occurs at a lower excitation power density.

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