Comment on “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)]

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Comment on “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)]

Authors
Publisher
American Institute of Physics
Keywords
  • In A Recent Paper
  • Sinha Et Al
  • Compared Sensitivities Of Planar Hall Effect Sensors With Different Geometries That Are All Based On
  • They Write That The Sensitivity Of A Planar Hall Effect Sensor With A Ring Geometry Is A Factor Of √
  • Osterberg Et Al Do Not Agree On The Signal Calculation For A Ring Sensor Derived By Sinha Et Al
  • And Claim That This Adversely Affects The Results

Abstract

Comment on “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)] - DTU Orbit (16/05/14) Comment on “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)] - DTU Orbit (16/05/14) Østerberg FW, Henriksen AD, Rizzi G, Hansen MF. Comment on “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)]. Journal of Applied Physics. 2013;114(10).

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