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Atomic layer MBE growth and characterization ofAlAs InAsstrained layer superlattices on GaAs

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
5
Issue
1
Identifiers
DOI: 10.1016/0749-6036(89)90060-8
Disciplines
  • Musicology
  • Physics

Abstract

Abstract A recent development of Molecular Beam Epitaxy (MBE) — the Atomic Layer Molecular Beam Epitaxy — has been used to grow AlAs InAs strained layer superlattices (SLS) on (001)GaAs at low growth temperatures (T s < 400°C). The growth process basically consists on alternating group V and/or group III beams following an optimum timing established by RHEED oscillations observation during the monolayer formation sequence. This method allows to grow at low substrate temperature with excellent morphology, even for those systems which have extremely different optimum MBE growth conditions and a severe lattice mismatch of 7% like AlAs InAs . X-ray diffraction and optical characterization results for superlattices of different periodicities are presented. In particular, Raman spectra of these samples showing folded acoustic phonons demonstrate their quality.

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