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Complement to theory of Raman scattering from adsorbed molecule on semiconductor

Authors
Journal
Surface Science Letters
0167-2584
Publisher
Elsevier
Publication Date
Volume
133
Issue
1
Identifiers
DOI: 10.1016/0167-2584(83)90738-7

Abstract

Abstract The Raman polarizability of a molecule adsorbed on a semiconductor is calculated when it couples to excitonic and interband excitations in the substrate. It is found that a difference in the electronic properties of each excitation manifests itself in the excitation profile of the Raman intensity of the adsorbed molecule, i.e., the former produces a sharp peak below the onset of interband excitation, whereas the latter gives rise to weaker but more broadened structure over a wide range of the spectrum.

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