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Exact result in the theory of electron potential barriers near the grain boundaries of semiconductor polycrystalline films

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
147
Identifiers
DOI: 10.1016/0375-9601(90)90619-y

Abstract

Abstract Two-dimensional distributions of the potential and the charge near the cross-shaped junction of the crystallites of a polycrystalline semiconductor film are calculated. The electron state charge on the crystal boundaries is assumed to be uniformly distributed over the boundaries. The space charge region is considered in the Schottky approximation. The problem of the nonlinear screening is reduced to that of determining the shape of the boundary of the Schottky layer. It is solved by methods of the theory of functions of a complex variable.

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