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GaAs, InP, and CdSe photovoltage transients

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
67
Issue
1
Identifiers
DOI: 10.1016/0039-6028(77)90380-6

Abstract

Abstract The response of the photovoltage of GaAs, InP, and CdSe to changes in the incident light intensity are examined with the retarding potential electron beam technique. It is demonstrated that the dynamics of the photovoltage transients are sensitive to the surface conditions. This is discussed in terms of a theoretical model which involved the capture of both electrons and holes at the semiconductor surface.

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