Affordable Access

Publisher Website

Barrier thickness dependence of photocurrent spectral intensity in GaAs/AlAs superlattice p-i-n diodes

Microelectronic Engineering
Publication Date
DOI: 10.1016/s0167-9317(98)00156-7
  • Quantum Wells
  • Semiconductors
  • Tunneling
  • Photoconductivity


Abstract We have experimentally studied photocurrent (PC) spectral intensity in GaAs/AlAs superlattices (SL) with different barrier thickness [ L B=2∼18 monolayers (ML)]. When the L B value is less than 6 ML, the PC spectra reveal clear evidence for the Wannier–Stark localization and the PC intensity shows an initially steep increase with the field (at less than 30 kV/cm) over a wide spectral range and then saturates at nearly the same level regardless of L B. For thick L B samples, however, the PC intensity is strongly dependent on the L B value, very gradually increases and reaches the saturation level under extremely high field conditions. These results are rigorously explained by considering the photogenerated carriers tunneling and the competition between the recombination lifetime and the tunneling escape time which is strongly varied by changing the barrier thickness.

There are no comments yet on this publication. Be the first to share your thoughts.