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Influence of Ge content on vibrational and optical properties of α-Si1-xGex:H thin films

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Publication Date
Volume
31
Issue
2
Identifiers
DOI: 10.1016/0927-0248(93)90059-c

Abstract

Abstract The effect of Ge on the optical gap and network short-range order in α-Si 1-xGe x:H alloys has been obtained by optical-absorption and Rama-scattering mmeasurements. A comparison of the correlation between Raman Si-Si transverse optical (TO) peak width and the optical gap for films with different Ge concentration (0.16 < * < 0.4) allows a separation of the roles of Ge-induced bond angle disordering and alloy energy band changes.

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