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Study of multiple-stacking growth of 1.55 μm InAs columnar quantum dots with modulated tensile-strained InGaAsP barrier layers

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
340
Issue
1
Identifiers
DOI: 10.1016/j.jcrysgro.2011.12.051
Keywords
  • A3. Low Pressure Metalorganic Vapor-Phase Epitaxy
  • B1. Nanomaterials
  • B2. Semiconducting Iii–V Materials
Disciplines
  • Physics

Abstract

Abstract An investigation was performed of columnar InAs quantum dots (CQDs) with modulated tensile-strained InGaAsP barriers in which the amount of tensile strain in the upper parts was higher than in the lower parts, the dots being deposited on an InP substrate grown by metalorganic vapor phase epitaxy. The smaller tensile strain of the barrier layers in the lower parts made the photoluminescence (PL) wavelength longer while the larger tensile strain of the barrier layers in the upper parts increased the strain compensation of the CQDs. Compared to CQDs with uniformly tensile-strained barriers, 1.55 μm emission was obtained at a higher average strain of barrier layers. By utilizing modulated tensile-strained barriers, triple-stacking of 12-fold CQDs with a PL wavelength of 1.55 μm using 30-nm-thick spacer layers was achieved with good crystallinity, indicating suitability for fabrication of high density CQDs.

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