Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor

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Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor

Authors
Publisher
DGE – German Society for Electron Microscopy
Keywords
  • Here
  • Interestingly
  • 05
  • Fe-Doped Gan Semiconductors Are Of Interest For Combining The Properties Of Semiconductors And Magne
  • Depending On The Growth Temperature Used
  • Fe Can Either Be Distributed Homogenously In The Gan Host Lattice Or It Can Accumulate In The Form O
  • As A Result Of The Small Size Of The Nanocrystals And The Sensitivity Of Fe-Doped Gan To Specimen Pr
  • The Formation And Physical Properties Of Fe-N Nanocrystals In Gan Are Not Yet Fully Understood
  • The (Ga
  • Fe)N Samples Examined Below Were Grown By Metalorganic Chemical Vapour Deposition [1] And Studied In
  • Great Care Was Taken During Tem Specimen Preparation To Minimize Ar Ion-Beam Induced Artefacts
  • Fe-N Nanocrystal Formation Was Observed In Samples That Had Been Deposited At Temperatures Higher Th
  • Most Of The Fe-N Nanocrystals Were Found To Be Associated With Closely Adjacent Void-Like Features I
  • As Shown In Figure 1(A)
  • We Use Aberration-Corrected Stem And Electron Energy-Loss Spectroscopy (Eels) To Show That These Fea
  • In Order To Interpret Our Experimental Results
  • We Calculate The N K Spectrum For Gan Using Self-Consistent Real-Space Multiple-Scattering Calculati
  • Which Allows To Include The Experimental Conditions
  • A Dedicated Stem Eels Measurement Was Performed Across A Single Nanocrystal (Shown In Fig
  • 1 (B)) Embedded In The Gan Host
  • A 100 Kv Acceleration Voltage And A Distributed-Dose Acquisition Routine [2] Was Used To Either Mini
  • Figure 2 (A) Shows Selected N K Edge Spectra Recorded From The Nanocrystal
  • The Adjacent N2-Containing Region And The Gan Host
  • The N K Edge Shows A Typical Three-Peaked Structure Between 400 And 407 Ev
  • Figure 2 (B) Shows The Experimental Spectrum Acquired From The Bubble Alongsidewith The Experimental
  • Figure 3 Shows The Result Of An Experiment That Provides Direct Evidence For The Presence Of N2 Gas
  • We Used A Static Sub-Angstrom Beam With A Current Of About 350 Pa To Make A Hole In The Specimen Exa
  • While Recording Eels Spectra Every 40 Seconds
  • The Intensity Of The Characteristic First Peak Of The N K Edge At 401 Ev Was Observed To Decrease Su
  • The Quantitative Determination Of The Pressure Of The N2 Gas In The Bubble From The Recorded Eels Sp

Abstract

Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor - DTU Orbit (25/04/14) Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor - DTU Orbit (25/04/14) Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor. / Kovács, András; Schaffer, B.; Moreno, M. S.; Kasama, Takeshi; Craven, A. J.; Dunin-Borkowski, Rafal E. MC 2011 Kiel: Microscopy Conference 2011. DGE – German Society for Electron Microscopy, 2011. p. M2-P523. Publication: Research - peer-review › Conference abstract in proceedings – Annual report year: 2011

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