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Hot electron effects in narrow width MOS devices

Authors
Journal
Microelectronics Journal
0026-2692
Publisher
Elsevier
Publication Date
Volume
18
Issue
6
Identifiers
DOI: 10.1016/s0026-2692(87)80329-4

Abstract

Narrow channel NMOSFET device degradation is explored by measuring the effect of hot-carrier stress on the current-voltage characteristics, the transconductance, field-effect mobility and surface scattering factor. Under conditions of substrate electron injection, the degradation mechanism can be explained as being interface charge generation, resulting in an increase on the surface scattering factor. This effect is more pronounced in narrow channel devices due to an excess hot-electron activity along the edges of the channel where the in-diffusion of field implant creates a region with higher impurity concentration.

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