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Polycrystalline CdS thin film field effect transistors: Fabrication, stability, and temperature dependence

Thin Solid Films
Publication Date
DOI: 10.1016/0040-6090(68)90013-8


Abstract In contrast to field effect transistors based on single crystal silicon, thin film field effect transistors utilizing polycrystalline semiconductors have been more difficult to reproduce, show greater instability of their operating characteristics, and exhibit a very strong temperature dependence. In this report the results of a fabrication and stability study on thin, polycrystalline CdS field effect transistors are given, in addition to our present understanding of the temperature dependence. Included are “in process” measurements during device fabrication, the use of SiO 2 and Si 3N 4 as the gate insulator, long-term behavior under d.c. gate bias, the temperature dependence of the channel mobility and flat-band voltage, and the problem of differential thermal expansion between film and substrate. Reproducibility within the same deposition, device stability up to 90 °C, and a considerable reduction in the temperature dependence over previously reported devices was achieved.

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