Affordable Access

Publisher Website

Onset of plastic relaxation in semipolar ([formula omitted]) InxGa1−xN/GaN heterostructures

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
388
Identifiers
DOI: 10.1016/j.jcrysgro.2013.10.027
Keywords
  • A1. Interfaces
  • A1. Line Defects
  • A1. Stresses
  • A3. Metalorganic Vapor Phase Epitaxy
  • B1. Nitrides
Disciplines
  • Chemistry

Abstract

Abstract The onset of plastic relaxation via misfit dislocation (MD) formation in InxGa1−xN layers grown by metal-organic chemical vapor deposition on the (112¯2) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence. The results of critical thickness calculations for MD formation as a function of InxGa1−xN alloy composition x are compared with experimental observations. MD generation is observed initially as a result of slip on the (0001) slip plane, and subsequently as a result of additional slip on inclined {11¯00}-typem-planes, which eventually leads to an increase in threading dislocation density.

There are no comments yet on this publication. Be the first to share your thoughts.