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Cryogenic, monolithic, differential GaAs preamplifier for bolometric detectors

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DOI: 10.1016/0168-9002(94)01606-2
OAI: oai:inspirehep.net:407163
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INSPIRE-HEP
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Abstract

We present a first prototype of a monolithic differential voltage-sensitive preamplifier for cryogenic applications made in a GaAs ion implanted MESFET process. This preamplifier presents a very high input impedance using only a single long-tailed pair at its input, which allows the noise to be kept low. It was designed to obtain low power dissipation and a large dynamic range. The results of the first prototype chips are presented.

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