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Correlated defects, metal-insulator transition, and magnetic order in ferromagnetic semiconductors.

Authors
  • Timm, C
  • Schäfer, F
  • von Oppen, F
Type
Published Article
Journal
Physical review letters
Publication Date
Sep 23, 2002
Volume
89
Issue
13
Pages
137201–137201
Identifiers
PMID: 12225058
Source
Medline
License
Unknown

Abstract

The effect of disorder on transport and magnetization in ferromagnetic III-V semiconductors, in particular (Ga,Mn)As, is studied theoretically. We show that Coulomb-induced correlations of the defect positions are crucial for the transport and magnetic properties of these highly compensated materials. We employ Monte Carlo simulations to obtain the correlated defect distributions. Exact diagonalization gives reasonable results for the spectrum of valence-band holes and the metal-insulator transition only for correlated disorder. Finally, we show that the mean-field magnetization also depends crucially on defect correlations.

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