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Control of InGaAs facets using metal modulation epitaxy (MME)

Authors
  • Wistey, Mark A.
  • Baraskar, Ashish K.
  • Singisetti, Uttam
  • Burek, Greg J.
  • Shin, Byungha
  • Kim, Eunji
  • McIntyre, Paul C.
  • Gossard, Arthur C.
  • Rodwell, Mark J. W.
Type
Preprint
Publication Date
Aug 16, 2014
Submission Date
Aug 16, 2014
Identifiers
arXiv ID: 1408.3714
Source
arXiv
License
Yellow
External links

Abstract

Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but metal modulated epitaxy (MME) produced smooth and gap-free "rising tide" (001) growth filling up to the mask. The resulting self-aligned FETs were dominated by FET channel resistance rather than source-drain access resistance. Higher As fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.

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