Silicon (Si) leaf spraying can benefit the production and quality of leafy vegetables. Such knowing is unclear to land cress (Barbarea verna) and root chicory (Cichorium intybus cv. Spadona). This study aimed was verify the effect of silicon leaf spraying under different sources and concentrations in Si leaf content, on growth variables, ascorbate leaf content, and water loss during storage of land cress and root chicory. We carried out two experiments with two vegetables grown in (4 dm3) pots filled with sand, receiving nutrient solution. During growing, the maximum temperature average was 43.1 °C ± 10.6 ºC. A completely randomized design was used in a 2 x 4 factorial scheme, with two sources of silicon: potassium silicate and stabilized sodium and potassium silicate, and four concentrations of leaf spraying Si: 0 (control), 0.84, 1.68, and 2.52 g L-1 of Si, with four replications. The seedlings were transplanted after 10 days of vessel emergence. Three Si leaf sprayings were done every ten days where the first spraying was at 28 days after transplanting (DAT). Silicon leaf spraying is feasible to increase the Si accumulation, plant growth and biofortification and decrease the post-harvest water loss of land cress and root chicory leaves. The Si concentration of 2.52 g L-1 as potassium silicate was highlighted.