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A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure

Authors
  • jin, p
  • pan, sh
  • yg, li
  • zhang, cz
  • wang, zg
Publication Date
Jan 01, 2006
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Complex Fourier transformation (CFT) has been employed to analyse contactless electroreflectance (CER) spectra from an undoped-n(+) GaAs structure with various ac modulations and dc bias voltages. The CFT spectra of CER have been compared with those of photoreflectance (PR). It has been found that the CER non-flat modulation is between the built-in electric field and a larger electric field which increases with the modulation voltage. The result has been explained by the screening of the applied modulation electric field in one of the two half modulation cycles and the trapping of electrons in surface states in the other half modulation cycle. The dc bias does not change the CER spectra, hence their CFT spectra. This is because of the screening of the applied dc bias electric field.

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