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Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs

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DSpace at IIT Bombay
Keywords
  • Silicon Mosfets
  • Degradation
  • Currents
  • Field
  • Model
  • Mosfet
  • Impact Ionization
  • Hot-Carriers
  • Sub-Bandgap
  • Quantization
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