Affordable Access

Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs

Authors
Publication Date
Source
DSpace at IIT Bombay
Keywords
  • Silicon Mosfets
  • Degradation
  • Currents
  • Field
  • Model
  • Mosfet
  • Impact Ionization
  • Hot-Carriers
  • Sub-Bandgap
  • Quantization
External links

Abstract

Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments