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Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors

Authors
  • Shobolova, T. A.
  • Korotkov, A. V.
  • Petryakova, E. V.
  • Lipatnikov, A. V.
  • Puzanov, A. S.
  • Obolensky, S. V.
  • Kozlov, V. A.
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
Oct 01, 2019
Volume
53
Issue
10
Pages
1353–1356
Identifiers
DOI: 10.1134/S1063782619100178
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractApproaches to solving the problem of the development of efficient bipolar and heterobipolar transistors operating at radio- and ultrahigh frequencies (0.1–10 GHz), which could be used as active elements of modern Si-based and GaAs-based radiation-resistant analog-digital integrated circuits, are discussed. Comparison of the radiation resistance of prospective “lateral” Si-based bipolar and “vertical” AlGaAs/GaAs heterobipolar transistors with a characteristic base thickness of 70–350 nm is performed. The features of the electron transport in active transistor regions are analyzed in detail and the influence of a surge in the velocity and the diffusion of quasi-ballistic electrons on an increase in the radiation resistance of transistors is evaluated.

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