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A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Authors
  • Hu, WG (Hu Wei-Guo)
  • Liu, XL (Liu Xiang-Lin)
  • Zhang, PF (Zhang Pan-Feng)
  • Zhao, FA (Zhao Feng-Ai)
  • Jiao, CM (Jiao Chun-Mei)
  • Wei, HY (Wei Hong-Yuan)
  • Zhang, RQ (Zhang Ri-Qing)
  • Wu, JJ (Wu Jie-Jun)
  • Cong, GW (Cong Guang-Wei)
  • Pan, Y (Pan Yi)
Publication Date
Jan 01, 2007
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

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