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Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Authors
  • Rogge, M. C.
  • Fuehner, C.
  • Keyser, U. F.
  • Haug, R. J.
  • Bichler, M.
  • Abstreiter, G.
  • Wegscheider, W.
Type
Published Article
Publication Date
Jul 30, 2003
Submission Date
Jul 30, 2003
Identifiers
DOI: 10.1063/1.1599972
arXiv ID: cond-mat/0307743
Source
arXiv
License
Unknown
External links

Abstract

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.

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