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CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

Authors
  • Hirono, Toko
  • Barbero, Marlon
  • Breugnon, Patrick
  • Godiot, Stephanie
  • Gonella, Laura
  • Hemperek, Tomasz
  • Hügging, Fabian
  • Krüger, Hans
  • Liu, Jian
  • Pangaud, Patrick
  • Peric, Ivan
  • Pohl, David-Leon
  • Rozanov, Alexandre
  • Rymaszewski, Piotr
  • Wang, Anqing
  • Wermes, Norbert
Publication Date
Sep 21, 2016
Source
HAL-UPMC
Keywords
Language
English
License
Unknown
External links

Abstract

A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.

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