A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150. nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166. μm and 80. μm. We report the results obtained with the prototype fabricated in this technology.