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Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

Authors
  • Bulgakov, Alexander
  • Evtushenko, Anton
  • Shukhov, Yuri
  • Ozerov, Igor
  • Marine, Wladimir
Publication Date
Jan 01, 2010
Identifiers
DOI: 10.1063/1.3507174
OAI: oai:HAL:hal-01620401v1
Source
HAL-SHS
Keywords
Language
English
License
Unknown
External links

Abstract

A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn_n O_m and In_n P_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In_4 P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favourable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

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