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Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs

Authors
  • Bruch, H.
  • Martini, H.
  • Bachem, K.-H.
  • Balk, P.
Publication Date
Jan 01, 1978
Source
HAL
Keywords
Language
English
License
Unknown
External links

Abstract

An experimental study of the VPE growth of GaAs at 1 023 K from the AsH 3-HCl-Ga-H 2 system yields for the dependence of the hole concentration on the technological parameters : p (300 K) ∼ p HCl·p-1GaCl·p1/2AsH3·p Zn. It is concluded that the process takes place under non equilibrium conditions. The PL intensity depends distinctly on the preparation conditions but does not fit a simple model.

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