Affordable Access

Access to the full text

Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

Authors
  • Islamov, D. R.
  • Perevalov, T. V.
  • Gritsenko, V. A.
  • Cheng, C. H.
  • Chin, A.
Type
Published Article
Publication Date
Mar 04, 2015
Submission Date
Jan 10, 2015
Identifiers
DOI: 10.1063/1.4914900
Source
arXiv
License
Yellow
External links

Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$ is phonon-assisted tunneling between traps like in HfO$_2$ and ZrO$_2$. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf$_{0.5}$Zr$_{0.5}$O$_2$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf$_{0.5}$Zr$_{0.5}$O$_2$ was discussed.

Report this publication

Statistics

Seen <100 times