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Characterization of microcrystalline silicon thin film solar cells prepared by high working pressure plasma-enhanced chemical vapor deposition

Authors
  • Lee, Sung-Do1, 2
  • Lee, Young-Joo1
  • Nam, Kee-Seok1
  • Jeong, Yongsoo1
  • Kim, Dong-Ho1
  • Kim, Chang-Su1
  • Park, Sung-Gyu1
  • Kwon, Se-Hun3
  • Kwon, Jung-Dae1
  • Park, Jin-Seong4
  • 1 Korea Institute of Materials Science, Surface Technology Division, Changwon, Gyeongnam, 641-831, Republic of Korea , Changwon (South Korea)
  • 2 Pusan National University, Department of Applied Hybrid Materials, Graduate School of Convergence Science, Busan, 609-735, Republic of Korea , Busan (South Korea)
  • 3 Pusan National University, School of Materials Science and Engineering, Busan, 609-735, Republic of Korea , Busan (South Korea)
  • 4 Hanyang University, Department of Materials Science and Engineering, Seoul, 133-719, Republic of Korea , Seoul (South Korea)
Type
Published Article
Journal
Journal of Electroceramics
Publisher
Springer US
Publication Date
Sep 30, 2014
Volume
33
Issue
3-4
Pages
149–154
Identifiers
DOI: 10.1007/s10832-014-9929-x
Source
Springer Nature
Keywords
License
Yellow

Abstract

Using the high working pressure plasma-enhanced chemical vapor deposition (HWP-PECVD) technique, the hydrogenated microcrystalline silicon (μc-Si:H) films for photovoltaic layers of thin film solar cells was investigated. The μc-Si:H films were deposited on surface textured fluorine-doped tin oxide (FTO) glass substrates at 100 Torr in a 100 MHz very high frequency (VHF) plasma of gas mixtures containing He, H2, and SiH4. It was found that an optimum ratio of the H2/SiH4 flow-rate existed for growing a homogenous microcrystalline through the whole film without amorphous incubation layer. When an intrinsic μc-Si:H thin film was deposited at n-i-p single junction solar cell, the cell performances were dependent on with or without an amorphous incubation layer. With an amorphous incubation layer, the open circuit voltage (Voc) of cell was 0.8 V, which was typical cell property of hydrogenated amorphous silicon (a-Si:H). On the other hand, at the optimum ratio of the H2/SiH4 flow-rate, μc-Si:H single cell responding an infrared light showed the Voc of 0.4 V.

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