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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Authors
  • van den Berg JA
  • Armour DG
  • Zhang S
  • Whelan S
  • Ohno H
  • Wang T -S
  • Cullis AG
  • Collart EHJ
  • Goldberg RD
  • Bailey P
  • Noakes TCQ
Publication Date
Jan 01, 2002
Identifiers
DOI: 10.1116/1.1477420
OAI: oai:epubs.cclrc.ac.uk:work/30258
Source
ePubs: the open archive for STFC research publications
Keywords
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