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Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Authors
  • leung, bh
  • chan, nh
  • fong, wk
  • zhu, cf
  • sw, ng
  • lui, hf
  • tong, ky
  • surya, c
  • lw, lu
  • wk, ge
Publication Date
Jan 01, 2002
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

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