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Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE

Authors
  • wang, hm
  • zeng, yp
  • fan, tw
  • zhou, hw
  • pan, d
  • dong, jr
  • kong, my
  • chinese, hm r wang
Publication Date
Jan 01, 1997
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

InAs thin films with good characteristics were grown on GaAs (0 0 1) substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy indicated that most of the threading dislocations formed by the interaction of misfit dislocations are annihilated above a small thickness. The high electron mobility and small temperature dependence of InAs epilayers are useful for magnetic sensors which is demonstrated by the properties of Hall effect devices.

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