Affordable Access

Publisher Website

Electron tunneling into amorphous silicon

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(72)90199-8

Abstract

Abstract Tunneling through an oxide barrier into amorphous silicon was investigated between liquid nitrogen and room temperatures. The tunneling junctions consisted of platinum, silicon oxide, and amorphous silicon in a sandwich configuration. The tunneling conductance, obtained by electronic differentiation, was found to be nearly symmetrical in bias voltage and to increase smoothly from zero bias. The observed temperature dependence of the tunneling conductance is interpreted in terms of localized states within a mobility gap. A mobility gap of approximately 1.6 eV and a density of localized states at the Fermi level of about 10 20/eV·cm 3 are inferred from the conductance data.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Hydrogen-free amorphous silicon with no tunneling...

on Physical Review Letters Jul 11, 2014

Electron emission from amorphous silicon

on Journal of Non-Crystalline Sol... Jan 01, 1972

Electron and hole kinetics in amorphous silicon

on Journal of Non-Crystalline Sol... Jan 01, 1987

Electrons, holes, and the hall effect in amorphous...

on Journal of Non-Crystalline Sol... Jan 01, 1993
More articles like this..