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1.31–1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

Authors
Journal
Optics Communications
0030-4018
Publisher
Elsevier
Publication Date
Volume
310
Identifiers
DOI: 10.1016/j.optcom.2013.07.063
Keywords
  • Hybrid Integrated Receiver
  • Quasi-Monolithic Integration Technology (Qmit)
  • Opto-Electronic Integrated Circuit (Oeic)
  • Top-Illuminated Planar Structure Photodetector
  • Eye Diagram
Disciplines
  • Design
  • Physics

Abstract

Abstract In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5GHz InGaAs photodetector and a 1.25Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

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