Affordable Access

Publisher Website

Temperature dependence of reverse annealing in bulk damaged silicon

Authors
Journal
Nuclear Physics B - Proceedings Supplements
0920-5632
Publisher
Elsevier
Publication Date
Volume
44
Identifiers
DOI: 10.1016/s0920-5632(95)80080-8

Abstract

A recent proposal [1] has suggested a model for the operation of silicon detectors which should give rise to the suppression of reverse annealing after neutron irradiation. The results of an experiment to investigate that model, in which the silicon is cooled during irradiations and annealed at high temperature between irradiations, are presented.

There are no comments yet on this publication. Be the first to share your thoughts.