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Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
39
Issue
4
Identifiers
DOI: 10.1016/s0026-2714(99)00022-0
Keywords
  • Oxide
  • Silicon
  • Silicon Carbide
  • Slow Trap
  • Nitridation

Abstract

Abstract In this paper, we demonstrate the unique ability of a newly developed slow-trap profiling technique to characterise silicon-based MOS capacitors in strong inversion. We also demonstrate the applicability of the slow-trap profiling technique for the characterisation of oxides grown on SiC. The obtained slow-trap profiles show that NO nitridation eliminates while N 2O creates defects acting as slow traps in the case of both Si and SiC substrates. The corresponding effects of nitridation on interface traps and fixed oxide charge are also discussed.

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