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Valence band states in diamond p-delta-doped quantum wells

Authors
Journal
Microelectronics Journal
0026-2692
Publisher
Elsevier
Publication Date
Volume
35
Issue
1
Identifiers
DOI: 10.1016/s0026-2692(03)00228-3
Keywords
  • P-Type-Doping
  • δ Quantum Wells
  • Electronic States
  • Hole Band Structure
Disciplines
  • Physics

Abstract

Abstract Heavy, light, and split-off hole states in p-δ-doped diamond quantum wells are studied with the use of a 6×6 k · p Hamiltonian. The calculation starts in the effective mass approximation with the solution of a three-independent (hh+lh+so) hole bands model at the Brillouin zone center, using a local density Thomas–Fermi approximation for the description of the band bending profile. The quantized eigenstates at the Γ point are used as a basis to diagonalize the k · p Hamiltonian, obtaining the different hole states at the non- Γ points. The results show that, in spite of the very small value of Δ 0 reported for diamond, in the specific case of p-type δ quantum wells, the contribution coming from the split-off band should not be omitted.

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