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Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
314
Issue
1
Identifiers
DOI: 10.1016/j.jcrysgro.2010.09.064
Keywords
  • A3. Metalorganic Vapor Phase Epitaxy
  • A3. Pendeoepitaxy
  • B1. Semi-Polar Nitrides
  • B2. Semiconducting Iii–V Materials
Disciplines
  • Physics

Abstract

Abstract Epitaxial lateral overgrowth is reported for semi-polar (Al,Ga)N(1 1 .2) layers. The mask pattern consisted of periodic stripes of SiO 2 oriented parallel to either the GaN[1 1 .0] or the GaN[ 1 1 .1] direction. Lateral growth occurred either along GaN[ 1 1 .1] or along GaN[ 1 1 .0]. For growth along the [ 1 1 .0] direction, coalescence was achieved for layer thicknesses >4 μm. However, planarization was not observed yielding extremely corrugated surfaces. For growth in [ 1 1 .1] direction, coalescence was delayed by a diminishing lateral growth rate. Growth of AlGaN during ELOG resulted in coalescence. Improvement in crystal quality of such buffer layers for the growth of InGaN/GaN quantum wells was confirmed by X-ray diffraction and photoluminescence spectroscopy.

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