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A photovoltaic cell from p-type boron-doped amorphous carbon film

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Publication Date
Volume
77
Issue
1
Identifiers
DOI: 10.1016/s0927-0248(02)00461-0
Keywords
  • Boron-Doped
  • Amorphous
  • Heterojunction
  • Photovoltaic

Abstract

Abstract Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage ( V oc) of 0.27 V and a short-circuit current density ( J sc) of 2.2 mA/cm 2 under illumination (AM1.5 100 mW/cm 2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

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