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Structural investigations of InZnO films grown by pulsed laser deposition technique

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
518
Issue
16
Identifiers
DOI: 10.1016/j.tsf.2009.12.032
Keywords
  • Indium Zinc Oxide
  • Thin Films
  • Pulsed Laser Deposition
  • Tco (Transparent And Conductive Oxides)

Abstract

Abstract Thin films of indium zinc oxide were grown from targets with In atomic concentration [In/(In + Zn)] of 2.8%, 4.3%, and 16.8%, respectively, by pulsed laser deposition technique (KrF laser, 10 Hz, 4 J/cm 2 fluence) on Si(001) and glass substrates that were heated at 500 °C. X-ray diffraction investigations showed that targets that had an atomic In concentration of 2.8% exhibited only the wurtzite-type ZnO lattice, while the targets that contained In concentrations of 4.3% and 16.8% consisted of a mixture of the wurtzite-type ZnO and the homologous compound Zn 7In 2O 10. All deposited films exhibited only the wurtzite-type ZnO lattice, being c-axis textured. The increase of the In concentration resulted in films less textured that also exhibited increased lattice parameters a and c. X-ray photoelectron spectroscopy investigations showed slight changes of the In 3d and Zn 2p binding energies for increased In content, consistent with an In doped ZnO lattice.

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