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Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
28
Issue
1
Identifiers
DOI: 10.1006/spmi.2000.0847
Keywords
  • Semiconductor
  • Digital Alloy
  • Brag Mirror.

Abstract

Abstract We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 μ m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm − 2 is observed for a mean electron concentration of about 5.5 × 10 18 cm − 3 . The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed.

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