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The diffusion of ionized impurities in semiconductors

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
15
Identifiers
DOI: 10.1016/0022-3697(60)90110-4

Abstract

Abstract The diffusion coefficient of an impurity in a semiconductor depends on the state of ionization of the impurity, i.e. on whether the Fermi level lies above or below the impurity energy level. A simple model, namely the one-dimensional diffusion of a shallow acceptor, is used to illustrate this and the results are applied to the diffusion of zinc in gallium arsenide.

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