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One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
229
Identifiers
DOI: 10.1016/0039-6028(90)90883-a
Disciplines
  • Physics

Abstract

Abstract Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.

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