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Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(87)90226-2
Disciplines
  • Physics

Abstract

Abstract The dark conductivity σ d , dark conductivity activation energy E a and photoconductivity σ ph of a-Si:H,F/a-Si,Ge:H,F superlattices are studied perpendicular to the plane of the layers. The samples have the same well (d g) and barrier (d s) thicknesses but their well composition varies. The perpendicular transport shows an interplay of quantum mechanical tunneling through the barriers and of classical thermal emission over the barrier layer. A model is presented that explains the results quantitatively.

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