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Fabrication of integrated double-gated field emission microsource and its electrical characteristics

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0167-9317(98)00104-x

Abstract

Abstract This paper presents the fabrication and electrical characteristics of the Integrated Field Emission Microsource (IFEMS) with multiple gates. The molybdenum field emission tip was made by filling cusp-like mold formed when a conformal film was deposited on the hole-trench. Each field emitter has a 1.8 μm-diameter extraction gate and a 1.4 μm-diameter focusing gate. To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP(Ethylene-Diamine Pyrocatechol) solution successively. The emission characteristics were measured and the influence of the focusing gate has been analyzed.

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